bcw60, bcx70 1 apr-12-2002 npn silicon af transistors for af input stages and driver applications high current gain low collector-emitter saturation voltage low noise between 30 hz and 15 khz complementary types: bcw61, bcx71 (pnp) 1 2 3 vps05161 type marking pin configuration package bcw60a bcw60b bcw60c bcw60d BCW60FF bcw60fn bcx70g bcx70h bcx70j bcx70k aas abs acs ads afs ans ags ahs ajs aks 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c sot23 sot23 sot23 sot23 sot23 sot23 sot23 sot23 sot23 sot23
bcw60, bcx70 2 apr-12-2002 maximum ratings parameter symbol bcw60 BCW60FF bcx70 unit collector-emitter voltage v ceo 32 32 45 v collector-base voltage v cbo 32 32 45 emitter-base voltage v ebo 5 5 5 dc collector current i c 100 ma peak collector current i cm 200 peak base current i bm 200 total power dissipation , t s = 71 c p tot 330 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction - soldering point 1) r thjs 240 k/w electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 bcw60/60ff bcx70 v (br)ceo 32 45 - - - - v collector-base breakdown voltage i c = 10 a, i b = 0 bcw60/60ff bcx70 v (br)cbo 32 45 - - - - emitter-base breakdown voltage i e = 1 a, i c = 0 v (br)ebo 5 - - 1 for calculation of r thja please refer to application note thermal resistance
bcw60, bcx70 3 apr-12-2002 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics collector cutoff current v cb = 32 v, i e = 0 v cb = 45 v, i e = 0 bcw60 /60ff bcx70 i cbo - - - - 20 20 na collector cutoff current v cb = 32 v, i e = 0 , t a = 150 c v cb = 45 v, i e = 0 , t a = 150 c bcw60 / 60ff bcx70 i cbo - - - - 20 20 a emitter cutoff current v eb = 4 v, i c = 0 i ebo - - 20 na dc current gain 1) i c = 10 a, v ce = 5 v h fe -grp. a/ g h fe -grp. b/ h h fe -grp. c/ j/ ff h fe -grp. d/ k/ fn h fe 20 20 40 100 140 200 300 460 - - - - - dc current gain 1) i c = 2 ma, v ce = 5 v h fe -grp. a/ g h fe -grp. b/ h h fe -grp. c/ j/ ff h fe -grp. d/ k/ fn h fe 120 180 250 380 170 250 350 500 220 310 460 630 dc current gain 1) i c = 50 ma, v ce = 1 v h fe -grp. a/ g h fe -grp. b/ h h fe -grp. c/ j/ ff h fe -grp. d/ k/ fn h fe 50 70 90 100 - - - - - - - - 1) pulse test: t = 300 s, d = 2%
bcw60, bcx70 4 apr-12-2002 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit max. typ. min. dc characteristics collector-emitter saturation voltage1) i c = 10 ma, i b = 0.25 ma i c = 50 ma, i b = 1.25 ma 0.12 0.2 v 0.25 0.55 - - v cesat base-emitter saturation voltage 1) i c = 10 ma, i b = 0.25 ma i c = 50 ma, i b = 1.25 ma v besat 0.7 0.83 0.85 1.05 - - - 0.75 - v be(on) - 0.55 - 0.52 0.65 0.78 base-emitter voltage 1) i c = 10 a, v ce = 5 v i c = 2 ma, v ce = 5 v i c = 50 ma, v ce = 1 v ac characteristics - 250 - f t transition frequency i c = 20 ma, v ce = 5 v, f = 100 mhz mhz - 3 c cb collector-base capacitance v cb = 10 v, f = 1 mhz - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz - c eb - 8 h fe -grp. a / g b / h c / j / ff d / k / fn h 11e short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz - - - - 2.7 3.6 4.5 7.5 - - - - k open-circuit reverse voltage transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz | h fe -grp. a / g b / h c / j/ff d / k / fn h 12e - - - - 1.5 2 2 3 - - - - 10 -4 1) pulse test: t = 300 s, d = 2%
bcw60, bcx70 5 apr-12-2002 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics short-circuit forward current transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz | h fe -grp. a / g b / h c / j/ ff d / k / fn h 21e - - - - 200 260 330 520 - - - - - open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz h fe -grp. a / g b / h c / j / ff d / k / fn h 22e - - - - 18 24 30 50 - - - - s noise figure i c = 200 a, v ce = 5 v, r s = 2 k , f = 1 khz, f = 200 hz h fe -grp. a - k ff - fn f - - 2 1 - 2 db equivalent noise voltage i c = 200 a, v ce = 5 v, r s = 2 k , f = 10 ... 50 hz h fe -grp. ff / fn v n - - 0.135 v
bcw60, bcx70 6 apr-12-2002 collector-base capacitance c cb = f ( v cbo ) emitter-base capacitance c eb = f ( v ebo ) 10 ehp00327 bcw 60/bcx 70 -1 1 10 v 10 0 6 12 pf 0 2 4 8 10 cbo vv ebo ebo c c cbo ebo c c cbo ) ) ( ( total power dissipation p tot = f ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 30 60 90 120 150 180 210 240 270 300 mw 360 p tot permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00328 bcw 60/bcx 70 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t transition frequency f t = f ( i c ) v ce = 5v 10 ehp00330 bcw 60/bcx 70 -1 2 10 ma 1 10 3 10 5 10 0 10 1 10 2 c t f mhz
bcw60, bcx70 7 apr-12-2002 base-emitter saturation voltage i c = f ( v besat ), h fe = 40 0 10 ehp00331 bcw 60/bcx 70 be sat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 ?c 25 100 ?c -50 ?c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 40 0 10 ehp00332 bcw 60/bcx 70 cesat v v 0.5 -1 10 0 10 1 2 10 5 5 c ma 0.1 0.2 0.3 0.4 ? c 100 25 ? c -50 ? c collector current i c = f ( v be ) v ce = 5v 0 10 ehp00333 bcw 60/bcx 70 be v 0.5 v 1.0 -2 10 -1 10 0 2 10 5 5 c ma 5 1 10 ? c 100 25 -50 ? c ? c dc current gain h fe = f ( i c ) v ce = 5v 10 ehp00334 bcw 60/bcx 70 -2 2 10 ma 0 10 3 10 5 5 10 -1 10 0 10 1 c fe h 1 10 2 10 ? c 100 5 25 ? c -50 ? c
bcw60, bcx70 8 apr-12-2002 collector cutoff current i cbo = f ( t a ) v cb = v cemax 0 10 ehp00335 bcw 60/bcx 70 a t 150 -1 4 10 cbo na 50 100 0 10 1 10 3 10 ? c typ max 10 2 h parameter h e = f ( i c ) normalized v ce = 5v 10 ehp00336 bcw 60/bcx 70 -1 1 10 ma -1 10 2 10 5 5 10 0 10 0 c e h 1 10 5 ce v = 5 v 11e h h 12e h 21e h 22e 5 h parameter h e = f ( v ce ) normalized i c = 2ma 0 0 ehp00337 bcw 60/bcx 70 ce v 30 10 20 0.5 1.0 1.5 2.0 h e v c = 2 ma h 11e 21e h 12e h 22e h noise figure f = f ( v ce ) i c = 0.2ma, r s = 2k , f = 1khz 10 ehp00338 bcw 60/bcx 70 -1 2 10 v 5 10 0 10 1 f 10 15 20 db 0 ce v
bcw60, bcx70 9 apr-12-2002 noise figure f = f ( i c ) v ce = 5v, f = 120hz 10 ehp00340 bcw 60/bcx 70 -3 1 10 ma 5 10 -2 10 -1 f 0 10 10 15 20 db 0 c s r = 1 m ?? 100 k ? 10 k ? 1 k ? 500 noise figure f = f ( f ) i c = 0.2ma, v ce = 5v, r s = 2k 10 ehp00339 bcw 60/bcx 70 -2 2 10 khz 5 10 -1 10 0 f 1 10 10 15 20 db f 0 noise figure f = f ( i c ) v ce = 5v, f = 1khz 10 ehp00341 bcw 60/bcx 70 -3 1 10 ma 5 10 -2 10 -1 f 0 10 10 15 20 db 0 c ? = 1 m s r 100 k ? 10 k ? 1 k ? 500 ? noise figure f = f ( i c ) v ce = 5v, f = 10khz 10 ehp00342 bcw 60/bcx 70 -3 1 10 ma 5 10 -2 10 -1 f 0 10 10 15 20 db 0 c = 1 m r s 100 k 10 k 500 1 k ? ? ? ? ?
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